What should be noticed when selecting COOLMOS during R&D of power supply? The structure difference between COOLMOS and VDMOS In order to overcome the contradiction between on-resistance and breakdown voltage of traditional MOS, some people have proposed a new type of ideal device structure based on VDMOS, called super junction device or COOLMOS...

On March 26, 2012, the Test and Application Center brought in the first ITC57300 dynamic parameter tester in China, which can test dynamic parameters for 2500V IGBT, MOSFET, diode and power transistor, further improving the test ability for test and application center. This device is designed and produced by American ITC company. It is a highly int...

With more than 6.5 million electric vehicles (EVs) on the road today, and annual worldwide sales projections by Pike Research reaching 3.8 million by 2020, demand for semiconductors in the automotive environment is heating up. In fact, Semicast Research calculates that "revenues for original equipment (OE) automotive semiconductors grew by 12% to U...

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随着制造技术的发展和进步，系统设计人员必须跟上技术的发展步伐，才能为其设计挑选最合适的电子器件。MOSFET是电气系统中的基本部件，工程师需要深入了解它的关键特性及指标才能做出正确选择。本文将讨论如何根据RDS(ON)、热性能、雪崩击穿电压及开关性能指标来选择正确的MOSFET。 MOSFET的选择MOSFET有两大类型：N沟道和P沟道。在功率系统中，MOSFET可被看成电气开关。当在N沟道MOSFET的栅极和源极间加上正电压时，其开关导通。导通时，电流可经开关从漏极流向源极。漏极和源极之间存在一个内阻，称为导通电阻RDS(ON)。必须清楚MOSFET的栅极是个高阻抗端，因此，总是要在栅极加上一个电压。如果栅极为悬空，器件将不能按设计意图工作，并可能在不恰当的时刻导通或关闭，导致系统产生潜在...