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SW035R10ES

SW035R10ES N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low RosoN (Typ 3.5mΩ)@Ves=10V

  • Low Gate Charge (Typ 83nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW035R10ES N-channel Enhanced mode TO-263 MOSFET

Samwin SW035R10ES N-channel Enhanced mode TO-263 MOSFET

Samwin SW035R10ES N-channel Enhanced mode TO-263 MOSFET

Samwin SW035R10ES N-channel Enhanced mode TO-263 MOSFET

Samwin SW035R10ES N-channel Enhanced mode TO-263 MOSFET

Samwin SW035R10ES N-channel Enhanced mode TO-263 MOSFET

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Related N-Channel SGT MOSFET (25V-250V)
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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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