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SW043R15E8S

SW043R15E8S N-Channel SGT MOSFET

Features


  • High ruggedness

  • Low RoscN (Typ 3.6mΩ)@Ves=10V

  • Low Gate Charge (Typ 162nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application:Synchronous Rectifcation,

  • Li Battery Protect Board, Motor Drives


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Products
MOSFET Diode Power Supply Module Motor Drive Controller
Services
Application Product Packaging Expert & Consultants FAE Technical Service
Quick Links
Company Video Blog
E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
sales@samwinsemi.com
+86-755-83981818
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