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SW072P03VT

SW072P03VT N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 9.4mΩ)@VGS=-4.5V

            RDS(ON) (Typ 7.0mΩ)@VGS=-10V

  • Low Gate Charge (Typ 45nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: DC-DC Converter, Motor Control


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excelent avalanche characteristics.


Samwin SW072P03VT P-channel Enhanced mode TO-252 MOSFET

Samwin SW072P03VT P-channel Enhanced mode TO-252 MOSFET

Samwin SW072P03VT P-channel Enhanced mode TO-252 MOSFET

Samwin SW072P03VT P-channel Enhanced mode TO-252 MOSFET

Samwin SW072P03VT P-channel Enhanced mode TO-252 MOSFET

Samwin SW072P03VT P-channel Enhanced mode TO-252 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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