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SW083R06VLS

SW083R06VLS N-Channel SGT MOSFET

General Description:

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.



Features:

  • High ruggedness

  • Low RosoN (Typ 12.7mΩ)@Vas=4.5V

  • (Typ 9.6mΩ)@Ves=10V

  • Low Gate Charge (Typ 22nC)

  • lmproved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drivers



Samwin SW083R06VLS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode DFN5*6 MOSFET


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