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SW083R06VLS

SW083R06VLS N-Channel SGT MOSFET

General Description:

This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.



Features:

  • High ruggedness

  • Low RDS(ON) (Typ 12.7mΩ)@VGS=4.5V  (Typ 9.6mΩ)@VGS=10V

  • Low Gate Charge (Typ 22nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Driver

Samwin SW083R06VLS N-channel Enhanced mode TO-251 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode TO-251 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode TO-251 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode TO-251 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode TO-251 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode TO-251 MOSFET


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