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SW2800R15ES

SW2800R15ES N-Channel SGT MOSFET

Features


  • High ruggedness

  • Low RoscN (Typ 208mΩ)@Ves=10V

  • Low Gate Charge (Typ 5.2nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application:TV,LED


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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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