Jul 09 , 2024
High ruggedness
Low RDS(ON) (Typ 9.0Ω)@VGS=10V
Low Gate Charge (Typ 2.8nC)
Improved dv/dt Capability
Application: High frequency switching mode power supply,Electronic ballast, UPS, PFC, High power switching power supply, Control of electric welding machine
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.