Don't Forget Your Original Intention and Forge Ahead
On February 11, the Xi'an Investment Cooperation Committee grandly held the "New Era, New Economy, New Xi'an - Xi'an 2017 Investment Promotion Work Briefing and Investment Ambassador ...
SW010R85E8S
FeaturesHigh ruggednessLow RoscN (Typ 1.2mΩ)@Ves=10VLow Gate Charge (Typ 179nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drive...
SW7N65C
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.2Ω)@VGS=10VLow Gate Charge (Typ 27nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW023R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.1mΩ)@VGS=4.5V RDS(ON) (Typ 2.4mΩ)@VGS=10VLow Gate Charge (Typ 206nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificat...
SW12N80KL
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.37Ω)@VGS=10VLow Gate Charge (Typ 28nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
Xi'an Intellectual Property Service Center Came to Our Company for On-Site Investigation
In order to build Xi'an's hard technology strength, expand Xi'an's hard technology brand, improve the hard technology industry ecosystem, and realize the conversion of new and old driv...
SW030R85E8S
FeaturesHigh ruggednessLow Rose (Typ 3.1mΩ)@Ves=10VLow Gate Charge (Typ 86nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW18N65B
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.46Ω)@VGS=10VLow Gate Charge (Typ 43nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW023R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.1mΩ)@VGS=4.5V RDS(ON) (Typ 2.4mΩ)@VGS=10VLow Gate Charge (Typ 198nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificat...
SW10N80K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.58Ω)@VGS=10VLow Gate Charge (Typ 27nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneralDescriptionThis power MOSFET is...
Warmly Welcome Ningbo Bull Optoelectronics to Visit Semipower
On January 25, 2018, three people from the purchasing department and R&D department of Ningbo Bull Optoelectronics Technology Co., Ltd. visited Semipower for an inspection. They mainly exchanged v...
SW046R85E8S
FeaturesHigh ruggednessLow RosoN (Typ 4.1mn)@Ves=10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW15N65B
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.65Ω)@VGS=10VLow Gate Charge (Typ 31nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW047R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.6mΩ)@VGS=4.5V RDS(ON) (Typ 4.1mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificati...
SW20N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
