The Power Semiconductor Device Market is Experiencing a Turning Point
Affected by problems such as slowing market demand and inventory adjustments, China's power device market growth rate dropped significantly in 2007 compared with 2006. Market sales were 76.23 bill...
SW036R08ES
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW1N60M
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.7Ω)@VGS=10VLow Gate Charge (Typ 6nC)lmproved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is ...
SW040R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.5mΩ)@VGS=4.5V (Typ 4.0mΩ)@VGS=10VLow Gate Charge (Typ 59nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW1N60DC
N-channel Enhanced mode TO-252/SOT223 MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 7Ω)@VGS=10V⚫ Low Gate Charge (Typ 7nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Application:Charge...
SW4N70K2
School-Enterprise Cooperation: Semipower and West Polytechnic Held an Expert Consultant Recruitment Ceremony
On the afternoon of July 24, 2018, our chairman Mr. Luo Yi, the general manager of the new power supply R&D center Mr. Liu Yaohua, and the school-enterprise cooperation project leader Ms. Feng Wan...
SW042R08ES
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW065R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 9.7mΩ)@VGS=4.5V(Typ 6.4mΩ)@VGS=10VLow Gate Charge (Typ 34nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery P...
SW601Q
General Description:The SW601Q is an N-channel power MOSFET using SAMWIN's Advanced technology to provide the customers with high switching speed.
SW15N80K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.21Ω)@VGS=10VLow Gate Charge (Typ 47nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
Great Wall Development Review Team Visits Semipower
On the morning of July 24, 2018, three people from the Great Wall Development Review Team, including Purchasing Manager Ms. Shi Feifei, R&D Manager Ms. Sheng Zhonglin, and Test Manager Mr. Hu Guan...
SW043R85ES
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW065R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 8.7mΩ)@VGS=4.5V (Typ 5.7mΩ)@VGS=10VLow Gate Charge (Typ 34nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW1N60D
▍N-channel Enhanced TO-251/TO-92/TO251S MOSFETFeatures⚫ High ruggedness⚫ Low RDS(ON) (Typ 6.6Ω)@VGS=10V⚫ Low Gate Charge (Typ 6.8nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Applicat...
