SW083R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
Differences Between Fast Recovery Rectifier Diodes and Standard Rectifier Diodes
As electronic devices continue to evolve toward higher efficiency and higher frequency, selecting the appropriate diode becomes increasingly critical. Both Fast Recovery Rectifier Diodes and Standard ...
SW025R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.1mΩ)@VGS=4.5V (Typ 2.7mΩ)@VGS=10VLow Gate Charge (Typ 90nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rect...
SW7N60D
▍ N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.05Ω)@VGS=10V⚫ Low Gate Charge (Typ 30nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Te...
SW7N65K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.57Ω)@VGS=10VLow Gate Charge (Typ 14.5nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET...
Semipower C Position Debuted at the 2018 Global Hard Technology Innovation Cooperation Conference
On November 8, under the guidance of the National Development and Reform Commission, the Ministry of Science and Technology, the Ministry of Industry and Information Technology, the Chinese Academy of...
Analysis of Current Situation and Trends of China's Semiconductor Industry
At the exchange dinner held on the 27th of this month, "China Semiconductor Association of North America visited "IT Times - Global Semiconductor Development Trends and Domestic Market Hotsp...
SW083R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
High Power Bridge Rectifier: Suited for High Load and High Efficiency Applications
A bridge rectifier is a vital electronic component primarily used to convert alternating current (AC) to direct current (DC). It typically consists of two or four diodes connected in a specific config...
SW040R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.1mQ)@VGS=4.5V (Typ 3.7mΩ)@VGS=10VLow Gate Charge (Typ 59nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Recti...
SW7N65K
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.5Ω)@VGS=10VLow Gate Charge (Typ 21nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
Warmly Welcome Hangzhou Changchuan Technology Co., Ltd. to Visit Semipower
On October 23, 2018, three people including Mr. Zhong from Hangzhou Changchuan Technology Co., Ltd. visited Chippower Technology for a visit and exchange. Mr. Yang Qingyu, deputy general manager of Ch...
China's Discrete Device Application Scale Will Reach Us$17 Billion in 2008
According to statistics from the Ministry of Information Industry, from January to October this year, mainland China has produced 199.5 billion semiconductor discrete devices, a year-on-year increase ...
SW083R06VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
SW4N60M
FeaturesHigh ruggednessLow RDS(ON) (Typ 2Ω)@VGS=10VLow Gate Charge (Typ 13.5nC)lmproved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
