SW060R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.6mΩ)@VGS=10VLow Gate Charge (Typ 94nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW2N65DB
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
CASA Standards Committee Established - 'Core' Opportunities and 'Core' Development
In the spring of Budize, all things are shining. The early spring of February quietly comes to us, and Xiaoxin also ushered in his spring. His "core" opportunity, "core" developmen...
SW020R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 2.2mΩ)@Ves=10VLow Gate Charge (Typ 164nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous RectificationLi Battery Protect Board, Motor Drive...
SW055R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.6mΩ)@VGS=10VLow Gate Charge (Typ 94nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
Shenzhen Megmeet Company Visited Semipower
At the beginning of the new year, Xiaoxin, which has always welcomed guests and friends from all over the world, has welcomed a new partner - Shenzhen Megmeet. As the saying goes, no single thread can...
SW030R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 2.9mΩ)@Ves=10VLow Gate Charge (Typ 125nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW7N70B
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.3Ω)@VGS=10VLow Gate Charge (Typ 24nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW066R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.6mΩ)@VGS=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
Scholars and Experts from Northwestern Polytechnical University Visited Semipower for Visits and Exchanges
At the beginning of the new year, Semipower’s school-enterprise cooperation with universities has also kicked off a new chapter.On February 10, 2017, Mr. Wang Jiabin, General Manager of Northwestern ...
SW036R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 3.8mΩ)@Ves=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW2N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.0Ω)@VGS=10VLow Gate Charge (Typ 9.5nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW062R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.2mΩ)@VGS=10VLow Gate Charge (Typ 85nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
Semipower President Luo Yi Was Invited to Visit a Well-Known Korean Power Device Manufacturer
On December 22, 2016, Mr. Luo Yi, President of Semipower, as a technical committee member of China Semiconductor Standardization, was invited by Korean power device manufacturers to visit South Korea ...
SW038R10VS
FeaturesHigh ruggednessLow RosoN (Typ 5.3mΩ)@Ves=4.5V(Typ 3.9mΩ)@Ves=10VLow Gate Charge (Typ 70nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Prote...
