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SW036R10E8S

SW036R10E8S N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low RosoN (Typ 3.8mΩ)@Ves=10V

  • Low Gate Charge (Typ 85nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drivers


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW036R10E8S N-channel Enhanced mode TO-220/TO-263/TO-263-7 MOSFET

Samwin SW036R10E8S N-channel Enhanced mode TO-220/TO-263/TO-263-7 MOSFET

Samwin SW036R10E8S N-channel Enhanced mode TO-220/TO-263/TO-263-7 MOSFET

Samwin SW036R10E8S N-channel Enhanced mode TO-220/TO-263/TO-263-7 MOSFET

Samwin SW036R10E8S N-channel Enhanced mode TO-220/TO-263/TO-263-7 MOSFET

Samwin SW036R10E8S N-channel Enhanced mode TO-220/TO-263/TO-263-7 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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