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SW050R85E7S

SW050R85E7S N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low RosoN (Typ 4.8mn)@Ves=10V

  • Low Gate Charge (Typ 77nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Inverter


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW050R85E7S N-channel Enhanced mode TO-220 MOSFET

Samwin SW050R85E7S N-channel Enhanced mode TO-220 MOSFET

Samwin SW050R85E7S N-channel Enhanced mode TO-220 MOSFET

Samwin SW050R85E7S N-channel Enhanced mode TO-220 MOSFET

Samwin SW050R85E7S N-channel Enhanced mode TO-220 MOSFET

Samwin SW050R85E7S N-channel Enhanced mode TO-220 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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