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SW210R06VLS

SW210R06VLS N-Channel SGT MOSFET

General Description:

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.



Features:

  • High ruggedness

  • Low R·so, (Typ 25mQ)@Vs=4.5V

  • RosoN(Typ 19mQ)@Ves=10V

  • Low Gate Charge (Typ 9.7nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives


Samwin SW210R06VLS N-channel Enhanced mode TO-252/TO-251S MOSFET

Samwin SW210R06VLS N-channel Enhanced mode TO-252/TO-251S MOSFET

Samwin SW210R06VLS N-channel Enhanced mode TO-252/TO-251S MOSFET

Samwin SW210R06VLS N-channel Enhanced mode TO-252/TO-251S MOSFET

Samwin SW210R06VLS N-channel Enhanced mode TO-252/TO-251S MOSFET

Samwin SW210R06VLS N-channel Enhanced mode TO-252/TO-251S MOSFET


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