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SW050R10E8S

SW050R10E8S N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low Ros (Typ 5.7mA)@Ves=10V

  • Low Gate Charge (Typ 51nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW050R10E8S N-channel Enhanced mode TO-220 MOSFET

Samwin SW050R10E8S N-channel Enhanced mode TO-220 MOSFET

Samwin SW050R10E8S N-channel Enhanced mode TO-220 MOSFET

Samwin SW050R10E8S N-channel Enhanced mode TO-220 MOSFET

buck converter for raspberry pi

Samwin SW050R10E8S N-channel Enhanced mode TO-220 MOSFET

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Related N-Channel SGT MOSFET (25V-250V)
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Address: E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
sales@samwinsemi.com
+86-755-83981818