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SW072R10VS

SW072R10VS N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low RosoN (Typ 9.5mΩ)@Ves=4.5V

  • (Typ 7.2mn)@Vas=10V

  • Low Gate Charge (Typ 49nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, inverter


General Description

This power MOSFET is produced with advanced technology of SAMWVIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW072R10VS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW072R10VS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW072R10VS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW072R10VS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW072R10VS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW072R10VS N-channel Enhanced mode DFN5*6 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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