SW2800R15ES
FeaturesHigh ruggednessLow RoscN (Typ 208mΩ)@Ves=10VLow Gate Charge (Typ 5.2nC)Improved dv/dt Capability100% Avalanche TestedApplication:TV,LED
SW6N80P
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.3Ω)@VGS=10VLow Gate Charge (Typ 20nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW068R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.9mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
After Ten Years of Hard Work, We Are in the Same Boat - Congratulations to Xi'an Semipower for Winning Salcomp's
In October 2015, Xi'an Semipower Electronic Technology Co., Ltd. won the Ten Years Contribution Award from Salcomp Technology Co., Ltd. This year, only two companies won this honor.Xi&...
SW058R15E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.4mΩ)@Ves=10VLow Gate Charge (Typ 163nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW10N80M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.86Ω)@VGS=10VLow Gate Charge (Typ 33nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW085R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 10.2mΩ)@VGS=10VLow Gate Charge (Typ 47nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
Semipower-CLP Port Attended the Computer Industry Association Technical Exchange Meeting
On October 13, CLP Port and the Computer Industry Association jointly held the "CLP Port Enters the Computer Industry Association Technical Exchange Meeting" at the Great Wall Group in Shenz...
SW420R20ES
FeaturesHigh ruggednessLow RosoN (Typ 44mQ)@Ves=10VLow Gate Charge (Typ 17nC)improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW6N80MA
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.0Ω)@VGS=10VLow Gate Charge (Typ 27nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW086R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 9.6mΩ)@VGS=10VLow Gate Charge (Typ 66nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW10N80D
N-channel Enhanced mode TO-220F MOSFETFeatures：⚫ High ruggedness⚫ Low RDS(ON) (Typ 1.0Ω)@VGS=10V⚫ Low Gate Charge (Typ 55nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche Tested⚫ Application:LED, Char...
Nobel Prize Winner Professor Shuji Nakamura Officially Becomes Senior Technical Consultant of Xi'an Semipower Electronic Technology Company
From July 27 to 29, 2015, Xi'an Semipower Electronic Technology Co., Ltd. invited Professor Shuji Nakamura, the Nobel Prize winner in physics, to visit Xi'an through its industrial partners fo...
SW076R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.9mΩ)@VGS=10VLow Gate Charge (Typ 78nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW7N80D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
