Email Us

SW050R95E8S

SW050R95E8S N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low RosoN (Typ 5.8mΩ)@Ves=10V

  • Low Gate Charge (Typ 50nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectifcation, Li Battery Protect Board, inverter


General Description

This power MOSFET is produced with advanced technology of SAMVVIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW050R95E8S N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R95E8S N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R95E8S N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R95E8S N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R95E8S N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R95E8S N-channel Enhanced mode DFN5*6 MOSFET

CONTACT US
We’re here to help. Fill out this brief form and a representative will contact you.
Related N-Channel SGT MOSFET (25V-250V)
Quick Links
Contact Us
Address: E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
sales@samwinsemi.com
+86-755-83981818