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SW230R10VS

SW230R10VS N-Channel SGT MOSFET

Features

  • High ruggedness

  • LoW RoSoN (Typ 21mQ)@Ves-4.5V

  • RosN (Typ 17mQ)@Ves=10V

  • Low Gate Charge (Typ 15nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectifcation, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW230R10VS N-channel Enhanced mode TO-252 MOSFET

Samwin SW230R10VS N-channel Enhanced mode TO-252 MOSFET

Samwin SW230R10VS N-channel Enhanced mode TO-252 MOSFET

Samwin SW230R10VS N-channel Enhanced mode TO-252 MOSFET

Samwin SW230R10VS N-channel Enhanced mode TO-252 MOSFET

Samwin SW230R10VS N-channel Enhanced mode TO-252 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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