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SW150R10VS

SW150R10VS N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low RosoN (Typ 17.5mΩ)@Ves=4.5V

  • (Typ 14.5mΩ)@Ves=10V

  • Low Gate Charge (Typ 14.4nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW150R10VS N-channel Enhanced mode TO-252 MOSFET

Samwin SW150R10VS N-channel Enhanced mode TO-252 MOSFET

Samwin SW150R10VS N-channel Enhanced mode TO-252 MOSFET

Samwin SW150R10VS N-channel Enhanced mode TO-252 MOSFET

Samwin SW150R10VS N-channel Enhanced mode TO-252 MOSFET

Samwin SW150R10VS N-channel Enhanced mode TO-252 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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