SW6N70B
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.35Ω)@VGS=10VLow Gate Charge (Typ 22nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW056R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.8mΩ)@VGS=10VLow Gate Charge (Typ 102nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
Semipower Successfully Passed the BYD Audit Team Supplier Audit
On December 25, 2016, Semipower successfully passed the SQE supplier system audit of BYD's Shenzhen headquarters. Previously, Semipower has supplied several series of products to BYD for many year...
SW050R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.7mΩ)@Ves=10VLow Gate Charge (Typ 51nC)Improved dv/dt Capability100% Avalanche TestedApplicationSynchronous Rectification,Li Battery Protect Board, Motor Drives
SW050R10E8S
FeaturesHigh ruggednessLow Ros (Typ 5.7mA)@Ves=10VLow Gate Charge (Typ 51nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW6N70P2
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.6Ω)@VGS=10VLow Gate Charge (Typ 20nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW065R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.3mΩ)@VGS=10VLow Gate Charge (Typ 75nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
SW16N70D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Semipower Participated in Power Network's 2016 China Engineer Tour Training Conference
On November 19, 2016, the "Power Network's 31st Annual Event - and 2016 Chinese Engineer Tour Training Conference" hosted by Power Network was grandly held at the Marco Polo Hotel in She...
SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.9mΩ)@Ves=10VLow Gate Charge (Typ 50nC)lmproved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drives
SW068R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.8mΩ)@VGS=10VLow Gate Charge (Typ 78nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, inverte...
The Third Meeting of JEDEC JC-14 Committee Was Successfully Held
The third group meeting of JEDEC JC-14 was held from November 17 to 18, 2016, at the Fifth Research Institute of Electronics of the Ministry of Industry and Information Technology in Guangzhou. Semipo...
SW038R10VS
FeaturesHigh ruggednessLow RosN (Typ 5.0mΩ)@Ves=4.5VRosc» (Typ 3.6mΩ)@Ves-10VLow Gate Charge (Typ 71nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery ...
SW16N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.5Ω)@VGS=10VLow Gate Charge (Typ 57nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW068R68E7T
FeaturesHigh ruggednessLow Rosom (Typ 7.1mΩ)@VGS=10VLow Gate Charge (Typ 87nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, InverterG...
