American ITC Company Visits Semipower
On November 15, 2016, American ITC technical expert Austin and ITC technical support Li Yang visited Semipower Power Device Test Application Center for technical exchanges and new test technology trai...
SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.4mΩ)@Ves=10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW12N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.9Ω)@VGS=10VLow Gate Charge (Typ 37nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW065R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 6.3mΩ)@VGS=10VLow Gate Charge (Typ 75nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
SW12N70D
N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFETFeatures⚫ High ruggedness⚫ Low RDS(ON) (Typ 0.75Ω)@VGS=10V⚫ Low Gate Charge (Typ 47nC)⚫ Improved dv/dt Capability⚫ 100% Avalanche T...
Semipower Debuted at IC CHINA 2016
From November 8 to 10, 2016, the 14th China International Semiconductor Expo and Summit Forum (IC China2016) was held at the Shanghai New International Expo Center. The "IC CHINA" exhibition...
SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 6.0mΩ)@Ves=10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW076R68E7T
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.6mΩ)@VGS=10VLow Gate Charge (Typ 70nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Inverte...
Semipower Participated in the 2016 7th Automobile Charging Pile and Industrial Power Supply Magnetic Component Application Technology Seminar
In order to welcome the peak investment in charging piles in the second half of the year and help charging pile companies keep abreast of the latest power technology, the "Seventh Automobile Char...
SW050R95E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.8mΩ)@Ves=10VLow Gate Charge (Typ 50nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, inverter
SW10N70M
FeaturesHigh ruggednessLow RDS(ON) (Typ 1.1Ω)@VGS=10VLow Gate Charge (Typ 30nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW050R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.3mΩ)@VGS=10VLow Gate Charge (Typ 130nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
SW7N70D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Advanced Training Seminar on Component Quality Reliability Evaluation Application and Failure Analysis Technology Came to Semipower for Visit and Study
On October 24, 2016, the "Advanced Training Seminar on Component Quality Reliability Evaluation, Application and Failure Analysis Technology" was led by Xi'an University of Electronic Sc...
SW072R10VS
FeaturesHigh ruggednessLow RosoN (Typ 9.5mΩ)@Ves=4.5V(Typ 7.2mn)@Vas=10VLow Gate Charge (Typ 49nC)Improved dv/dt Capability100% Avalanche TestedApplicationSynchronous RectificationLi Battery Protect ...
